MCH5823 no.7757-1/5 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7757 MCH5823 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications features ? composite type with a p-channel silicon mosfet (mch3339) and a schottky barrier diode (ss10015m) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. [sbd] ? short reverse recovery time. ? low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --12 v gate-to-source voltage v gss 12 v drain current (dc) i d --1.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --6.0 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 3 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qz any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. d2004pe ts im tb-00001070
MCH5823 no.7757-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --12 v zero-gate voltage drain current i dss v ds =--12v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 9.6v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--6v, i d =--1ma --1.0 --2.4 v forward transfer admittance ? yfs ? v ds =--6v, i d =--0.8a 0.72 1.2 s r ds (on)1 i d =--0.8a, v gs =--10v 200 270 m w static drain-to-source on-state resistance r ds (on)2 i d =--0.4a, v gs =--4.5v 340 490 m w r ds (on)3 i d =--0.1a, v gs =--4v 370 530 m w input capacitance ciss v ds =--6v, f=1mhz 145 pf output capacitance coss v ds =--6v, f=1mhz 45 pf reverse transfer capacitance crss v ds =--6v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit 7.5 ns rise time t r see specified test circuit 20 ns turn-off delay time t d (off) see specified test circuit 16 ns fall time t f see specified test circuit 12 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--1.5a 3.8 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1.5a 0.5 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--1.5a 0.5 nc diode forward voltage v sd i s =--1.5a, v gs =0 --0.94 --1.5 v [sbd] reverse voltage v r i r =0.5ma 15 v forward voltage v f 1i f =0.3a 0.30 0.33 v v f 2i f =0.5a 0.33 0.36 v reverse current i r v r =6v 90 m a interterminal capacitance c v r =10v, f=1mhz, 1 cycle 20 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm 2195 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain sanyo : mcph5 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 32 4 5 123 54 (bottom view) (top view) 54 3 12 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain top view
MCH5823 no.7757-3/5 switching time test circuit t rr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d = --0.8a r l =12.5 w v dd = --10v v out MCH5823 v in 0v --10v v in duty 10% 50 w 100 w 10 w --5v t rr 100ma 100ma 10ma 10 m s r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta ? y fs ? -- i d i f -- v sd [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a static drain-to-source on-state resistance, r ds (on) -- m 0 --2 --4 --6 --8 --10 --12 200 400 600 800 100 300 500 700 0 100 200 300 400 500 600 700 0 it05615 0 0 --0.8 --1.2 --1.6 --2.0 --0.2 --0.4 --0.6 --1.0 --1.4 --1.8 --0.2 0 --0.6 --0.4 --2.0 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --0.2 --1.0 --0.8 --0.6 it05613 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 it05614 it05616 --60 --40 --20 0 20 40 60 80 100 120 140 160 --0.4 --0.1 --0.9 --0.7 --0.5 --0.3 --3.0v v gs = --2.5v --10v --6.0v --4.5v --4.0v ta=75 c 75 c ta=--25 c 25 c 25 c --25 c v ds = --10v ta=25 c --0.4a i d = --0.8a, v gs = --10v i d = --0.1a, v gs = --4.0v i d = --0.4a, v gs = --4.5v it05617 --0.01 1.0 --0.1 23 57 --1.0 23 57 23 57 0.1 5 7 3 2 5 7 3 2 ta= --25 c v ds = --10v 75 c 25 c it05618 --0.8 --1.0 --0.6 --1.2 --0.4 --0.01 --0.1 --1.0 7 5 3 2 7 5 3 2 5 3 2 v gs =0 75 c 25 c ta= --25 c i d = --0.1a --0.8a
MCH5823 no.7757-4/5 1.0 --0.01 --0.1 23 57 --1.0 23 57 23 57 3 5 2 7 3 5 2 7 100 3 5 2 10 it05619 v dd = --10v v gs = --10v t d (off) t d (on) t r t f 0 100 5 7 2 3 2 3 10 --12 --4 --6 --8 --10 -- 2 it05620 ciss coss crss f=1mhz 0 0 -- 8 -- 9 4 3 2 1 --10 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 it05621 v ds = --10v i d = --1.5a 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 it06929 [mosfet] [mosfet] drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v sw time -- i d ciss, coss, crss -- v ds ciss, coss, crss -- pf [mosfet] [mosfet] [mosfet] p d -- ta total gate charge, qg -- nc gate-to-source voltage, v gs -- v ambient temperature, ta -- c allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg a s o mounted on a ceramic board (900mm 2 5 0.8mm) 1unit --10 --1.0 --0.01 --0.1 23 57 23 57 2 2 357 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 it06928 i dp = --6.0a i d = --1.5a operation in this area is limited by r ds (on). 100ms 100 m s dc operation 1ms 10ms <10 m s ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit [sbd] [sbd] i r -- v r i f -- v f forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- m a 0 100000 100 1000 10000 10 1.0 0.1 0.01 15 510 0 0.01 0.001 0.3 0.4 0.5 0.1 0.2 0.1 10 7 5 3 2 1.0 7 5 3 2 7 5 3 2 7 5 3 2 ta=125 c 25 c --25 c 50 c 75 c 100 c it07150 it07151 ta=125 c 100 c --25 c 75 c 50 c 25 c
MCH5823 no.7757-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2004. specifications and information herein are subject to change without notice. ps [sbd] i s 20ms t 7 0.01 23 7 0.1 0 5237 1.0 523 3.0 3.5 2.0 1.0 2.5 1.5 0.5 time, t -- s surge forward current, i fsm (peak) -- a id00338 i fsm -- t current waveform 50hz sine wave [sbd] [sbd] c -- v r p f (av) -- i o average forward current, i o -- a average forward power dissipation, p f (av) -- w reverse voltage, v r -- v interterminal capacitance, c -- pf 0 0 0.2 0.4 0.6 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.5 1.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 it07152 it07153 (1) (2) (4) (3) 180 360 q 360 rectangular wave sine wave (1)rectangular wave q =60 (2)rectangular wave q =120 (3)rectangular wave q =180 (4)sine wave q =180 2 100 10 2 3 5 7 23 57 1.0 0.1 23 57 10 2 f=1mhz note on usage : since the MCH5823 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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